研究方向
1、功率半导体器件设计与制造
2、抗辐照加固功率半导体器件研发
3、宽禁带（SiC、GaN、Ga2O3）功率半导体器件可靠性研究
4、功率半导体器件解析建模
个人简介
男，工学博士，研究生导师。主要从事功率半导体器件相关方向的研究工作，在国际顶级期刊TPE、EDL、TED、TNS等上发表多篇研究成果，获得国自然、中国博士后、北京市博士后、北京市朝阳区博士后科学基金资助。
教育简历
2014.09-2018.07 清华大学 微纳电子系 博士
2011.09-2014.07 北京工业大学 微电子专业 硕士
2007.09-2011.07 河北工业大学 电子科学与技术专业 学士
工作履历
2018.07-至今 北京工业大学 博士后、讲师
课程教学
本科生教学：电子技术实验-1、功率半导体器件及应用
研究生教学：宽禁带功率半导体器件设计与制造
科研项目
1、国家自然科学基金
2、共用信息系统装备预研
代表性研究成果
[1] Y. Li, X. Zhou*, Y. Zhao, et al., "Gate Bias Dependence of VTH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests," IEEE Transactions on Electron Devices, vol. 69, no. 5, pp. 2521-2527, May 2022.
[2] X. Zhou, H. Pang, Y. Jia*, et al., "Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike," IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 4010-4015, Aug. 2021.
[3] X. Zhou, H. Pang, Y. Jia*, et al., "SiC Double-Trench MOSFETs with Embedded MOS-Channel Diode," IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 582-587, Feb. 2020.
[4] X. Li, Y. Jia, X. Zhou*, et al., "Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking," IEEE Electron Device Letters, vol. 41, no. 2, pp. 216-219, Feb. 2020.
[5] X. Zhou, Y. Jia*, D. Hu, et al., "A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility," IEEE Transactions on Electron Devices, vol. 66, no. 6, pp. 2551-2556, June 2019.
[6] X. Zhou, Y. Tang, Y. Jia*, et al., "Single-Event Effects in SiC Double-Trench MOSFETs," IEEE Transactions on Nuclear Science, vol. 66, no. 11, pp. 2312-2318, Nov. 2019.
[7] X. Zhou, H. Su, R. Yue, et al., "A Deep Insight Into the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Unclamped Inductive Switching Stresses," IEEE Transactions on Power Electronics, vol. 33, no. 6, pp. 5251-5261, June 2018.
[8] X. Zhou, R. Yue, J. Zhang, et al., "4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure," IEEE Transactions on Electron Devices, vol. 64, no. 11, pp. 4568-4574, Nov. 2017.
[9] X. Zhou*, H. Su, Y. Wang, et al., "Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests," IEEE Transactions on Electron Devices, vol. 63, no. 11, pp. 4346-4351, Nov. 2016.
